Blane
1
Seeking to take the next step toward future optical disk systems, Toshiba Corp. has developed a blue-violet laser that achieved continuous optical output of 200 mW at room temperature.
Laser with optical outputs of about 30 mW are required for recordable optical disk systems using blue-violet lasers. Nichia Corp. is already offering 30-mW devices, and Sanyo Electric Co. Ltd. began sampling devices with 35-mW output power in May.
When those recordable blue laser disk systems evolve into high-speed recorders with dual-use layer disks, higher power lasers will be required.
Toshiba reported the newly developed lasers at the technical meeting of the Institute of Electronics, Information and Communication Engineers being held this week in Nagoya. It will exhibit them at CEATEC JAPAN 2003 to be held at Makuhari Messe near Tokyo next week.
Toshiba's high power blue-violet laser was fabricated using a gallium-nitride (GaN) substrate. The substrate became available recently from manufacturers such as Sumitomo Electric Industries, Ltd. (Osaka), Hitachi Cable Ltd. (Tokyo) and Crystal Photonics Inc. (Sanford, Fla.).
Toshiba made a comparison of characteristics and production processes for lasers fabricated on GaN and sapphire substrates currently used for GaN device fabrication. It concluded that devices based on GaN substrates were superior.
The prototype lasers fabricated on the GaN substrate oscillate at 409 nm. The best performing devices among the prototypes have an optical output of 200 mW in continuous-wave mode at room temperature. Threshold current was 35 mA, and the operation current was 164 mA.
The aspect ratio of the beam spot — the smaller the better in laser devices — was 2.0, matching that of lasers used in many devices. The device had an output power of 30 mW even at temperatures of 100 degrees C, Toshiba reported.
Typical prototypes exhibited 30-mW output power with threshold current at 49 mA and threshold voltage at 4.9 volts. At 30 mW, the operational current was 84 mA while operation voltage was 5 volts. Relative intensity noise measured -132dB/Hz at 3 mW output power, which Toshiba claimed is the best ever achieved.
Toshiba did not disclose the lifetime of the laser prototype. It anticipates that high-power lasers with output power of 200 mW level will be in demand around 2006, and is targeting laser development around that timeframe, a Toshiba spokesman said.
Laser with optical outputs of about 30 mW are required for recordable optical disk systems using blue-violet lasers. Nichia Corp. is already offering 30-mW devices, and Sanyo Electric Co. Ltd. began sampling devices with 35-mW output power in May.
When those recordable blue laser disk systems evolve into high-speed recorders with dual-use layer disks, higher power lasers will be required.
Toshiba reported the newly developed lasers at the technical meeting of the Institute of Electronics, Information and Communication Engineers being held this week in Nagoya. It will exhibit them at CEATEC JAPAN 2003 to be held at Makuhari Messe near Tokyo next week.
Toshiba's high power blue-violet laser was fabricated using a gallium-nitride (GaN) substrate. The substrate became available recently from manufacturers such as Sumitomo Electric Industries, Ltd. (Osaka), Hitachi Cable Ltd. (Tokyo) and Crystal Photonics Inc. (Sanford, Fla.).
Toshiba made a comparison of characteristics and production processes for lasers fabricated on GaN and sapphire substrates currently used for GaN device fabrication. It concluded that devices based on GaN substrates were superior.
The prototype lasers fabricated on the GaN substrate oscillate at 409 nm. The best performing devices among the prototypes have an optical output of 200 mW in continuous-wave mode at room temperature. Threshold current was 35 mA, and the operation current was 164 mA.
The aspect ratio of the beam spot — the smaller the better in laser devices — was 2.0, matching that of lasers used in many devices. The device had an output power of 30 mW even at temperatures of 100 degrees C, Toshiba reported.
Typical prototypes exhibited 30-mW output power with threshold current at 49 mA and threshold voltage at 4.9 volts. At 30 mW, the operational current was 84 mA while operation voltage was 5 volts. Relative intensity noise measured -132dB/Hz at 3 mW output power, which Toshiba claimed is the best ever achieved.
Toshiba did not disclose the lifetime of the laser prototype. It anticipates that high-power lasers with output power of 200 mW level will be in demand around 2006, and is targeting laser development around that timeframe, a Toshiba spokesman said.
think gonna wait longer till blue laser becomes std 2 buy my first dvd burner