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BOISE, Idaho -- Micron Technology Inc., said today (December 23, 2002) that it has demonstrated a 1-Gbit double data rate synchronous DRAM manufactured on 0.11-micron process technology, which it claims is the industry's first such device.
The device requires a 2.5-V supply and is packaged in a 400-mil thin small outline package, the company said. The company did not say who received the demonstration.
full info Here
The device requires a 2.5-V supply and is packaged in a 400-mil thin small outline package, the company said. The company did not say who received the demonstration.
full info Here
